| 摘要 |
<p>A switch element (18) is positioned in such a manner as to be joined to the electromagnetic field of a cavity resonator of a high-frequency oscillator, a bias voltage-applying terminal (14T) is connected to one electrode of the switch element (18), and the other electrode of the switch element (18) is electrically connected to the cavity resonator (an anode shell (2) in the example represented by fig. 1). A metal plate (22) of a size that reflects, at high frequency, radio waves that are propagated around the switch element (18) is disposed at either one of the ends of the switch element (18), and the reactance of the switch element (18) is changed by applying a bias voltage to the switch element (18) and changing the bias voltage, thereby causing the oscillation frequency of the cavity resonator to change. This method enables the oscillation frequency to be significantly changed relative to a slight change in the bias voltage.</p> |
