| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a detecting method for time of an end point of polishing so that polishing can be accurately completed at a time of an end point of the predetermined polishing. <P>SOLUTION: The detecting method includes a step of analyzing a spectral result obtained by a spectral means, of light reflected by a wafer surface, and the analyzing step includes a first step of performing real-time Fourier transform of a spectral waveform upon polishing and of extracting a real-time wave-number cycle h<SB>2</SB>corresponding to the film thickness of an Si layer which is polished away, a second step of setting a time point when two cycles of the real-time wave-number cycle h<SB>2</SB>upon polishing and a reference wave-number cycle h<SB>0</SB>previously acquired at a predetermined film thickness of halfway point in the polishing are collated to make a determination before the time point E. P of end of the polishing, and sequentially monitoring change in matching state between the real time wave-number cycle h<SB>2</SB>and the reference wave-number cycle h<SB>0</SB>, and a third step of finding a time point t<SB>2</SB>when the matching state becomes maximal right after becoming maximal, the polishing being carried out for the remaining time based upon a previously set extension time from the point of time t<SB>2</SB>when the matching state becomes maximal to the end of the polishing. <P>COPYRIGHT: (C)2010,JPO&INPIT |
