THREE-LEVEL INVERTER

摘要

The present invention discloses a tri-level inverter, which relates to the field of power electronics technologies, so as to achieve a fast switching speed and a small loss and avoid a relevant electrical problem caused by a poor reverse recovery characteristic of a parasitic diode inside an MOSFET. The tri-level inverter includes: a first switch tube, a second switch tube, a third switch tube, and a fourth switch tube that are serially connected to each other, where the first switch tube and the fourth switch tube are field effect transistors, and the second switch tube and the third switch tube are bipolar transistors; a first diode, where a cathode thereof is connected to a drain of the first switch tube, and an anode thereof is connected to a source of the first switch tube; a second diode, where a cathode thereof is connected to a drain of the fourth switch tube, and an anode thereof is connected to a source of the fourth switch tube; a fifth diode, where an anode thereof is connected to a fourth node, and a cathode thereof is connected to a second node; and a sixth diode, where an anode thereof is connected to a sixth node, and a cathode thereof is connected to the fourth node.