发明名称
摘要 To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.
申请公布号 JP5341245(B2) 申请公布日期 2013.11.13
申请号 JP20120265262 申请日期 2012.12.04
申请人 发明人
分类号 G02F1/1368;G09G3/20;G09G3/36;H01L21/336;H01L29/786 主分类号 G02F1/1368
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