| 摘要 |
The shape of a resist pattern for use as an etching mask is formed in such a shape to disperse the stress so as to prevent an interlayer insulation film from being etched undesirably because of cracks that occurred in the resist film for forming openings in a light receiving region, the stress being produced because of the hardening of the resist film in a post baking process after the resist is exposed and developed. In order to disperse the stress, the opening process in the resist pattern is formed into a planar shape without corners. |
