Method for initiating a refresh operation in a solid-state nonvolatile memory device

摘要

A method for initiating a refresh operation of a solid-state nonvolatile memory device coupled to a processor is disclosed. The method comprises determining an error number for a block of the solid-state nonvolatile memory. The error number corresponds to an amount of error bits in a page of the block having a greatest amount of error bits. The method further comprises comparing the error number with an error threshold and determining a reset number indicating an amount of times that the processor has been reset since a previous refresh operation was performed on the block of the solid-state nonvolatile memory. The method further includes comparing the number of resets with a reset threshold and refreshing the block of the solid-state nonvolatile memory when the number of errors exceeds the error threshold and the number of resets exceeds the reset threshold.