| 摘要 |
PURPOSE: A manufacturing method for a GaN(gallium nitride) LED array device for an optogenetics and the GaN LED array device manufactured thereby are provided to easily clarify a nerve circuit by allowing on-off stimulation of a nerve cell through an LED array which independently becomes on/off. CONSTITUTION: A bonding layer(501) is coated on a plastic substrate(500). A first passivation layer(310) is laminated on the bonding layer. A second passivation layer(320) is laminated on the first passivation layer. A third passivation layer(330) is laminated on the second passivation layer. A first contact line(502) is connected to a contact metal on an n-GaN layer. A second metal line(503) is connected to a contact metal on a p-GaN layer. |
