Semiconductor layer structure

摘要

The structure has a conductive substrate (109) including potential corresponding to another potential such that a drain voltage threshold lower than a breakdown voltage threshold is determined by isolating ions that are implanted in a region of the substrate into the substrate. Charge dissipates from a contact through a buffer layer (107) toward a substrate region without the isolating ions if the former potential deviates from the latter potential by the drain voltage threshold. The substrate region without the isolating ions is located underneath the contact. The conductive substrate is a silicon or doped silicon carbide substrate. The contact is source contact (101), drain contact (102) e.g. ohmic contact, and gate contact (103).