| 摘要 |
<p>The present invention relates to a semiconductor memory device. Disclosed is technology for a serial cell structure of a phase change memory (PCM). The present invention comprises a plurality of unit cells laminated as a plurality of layers; a switching component which comprises one bit line which is formed by a vertical structure and is shared by a plurality of unit cells; and a phase change resistance cell formed on the upper part of the switching component. Each unit cell comprises a source area, a drain area, and a channel area. [Reference numerals] (SW11) Channel</p> |
