| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a vapor phase growth device having a raw material feeding pipe installed in a chamber, which suppresses a memory effect of a p-type impurity and unfailingly performs impurity doping. <P>SOLUTION: The vapor phase growth device includes a chamber body 3, a chamber lid 5, a susceptor 11 installed in the chamber body 3 to place a substrate 9 where a thin film grows, and an opposite surface member 13 oppositely provided to the susceptor 11, and heats the substrate 9 in a state that the substrate 9 is placed on the susceptor 11. The vapor phase growth device includes a plurality of raw material introducing flow paths 37, 39 and 41 for introducing a vapor phase growth material into a reaction chamber formed of the opposite surface member 13 and the susceptor 11. In the vapor phase growth device out of the plurality of raw material introducing flow paths, at least one introducing flow path 39 is used as a doping raw material introducing flow path for supplying the doping raw material, a heat medium jacket 43 for circulating a heat medium is provided adjacently to the flow path wall of the doping raw material introducing flow path, and a temperature controller for controlling the temperature of the heat medium is provided. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
