| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has excellent ESD resistance and does not require a protective element to be fabricated anew. SOLUTION: The semiconductor device includes a main MOSFET element 31 having a gate electrode connected with a gate terminal 22 which controls the main current, a drain electrode connected with a drain terminal 21 which feeds the main current, and a source electrode connected with a source terminal 23 which feeds the main current, a sense MOSFET element 32 having a gate electrode connected with the gate terminal 22, a drain electrode connected with the drain terminal 21, and a source electrode connected with a sense source terminal 24 for current detection, an ESD protective element A33 having a gate electrode connected with the source terminal 23, a drain electrode connected with the drain terminal 21, and a source electrode and a body electrode connected with the sense source terminal 24, and an ESD protective element D41 having a cathode electrode connected with the gate terminal 22, and an anode electrode connected with the sense source terminal 24. COPYRIGHT: (C)2011,JPO&INPIT |
