发明名称 POWER SEMICONDUCTOR MODULE
摘要 <p>The present invention provides a power semiconductor module (1) which includes at least a pair of substrates loaded on a base plate (2). Multiple power semiconductors (4, 5, 25) are loaded on each substrate (3) and the power semiconductors (4, 5, 25) of different numbers are arranged along opposite edges of the substrate on the each substrate (3). At least a pair of substrates is arranged on the base plate (2) and edges (6) of the substrates (3) in which a few power semiconductors (4, 5, 25) are provided and are arranged to be faced toward each other.</p>
申请公布号 KR20130123328(A) 申请公布日期 2013.11.12
申请号 KR20130049112 申请日期 2013.05.01
申请人 ABB TECHNOLOGY AG 发明人 HARTMANN SAMUEL;TRUESSEL DOMINIK
分类号 H01L25/065;H01L25/16 主分类号 H01L25/065
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