发明名称 |
Large CMOS image sensor pixel with improved performance |
摘要 |
An image sensor pixel includes a photosensitive element having a first doping type disposed in semiconductor material. A deep extension having the first doping type is disposed beneath and overlapping the photosensitive element in the semiconductor material. A floating diffusion is disposed in the semiconductor material. A transfer gate is disposed over a gate oxide that is disposed over the semiconductor material. The transfer gate is disposed between the photosensitive element and the floating diffusion. The photosensitive element and the deep extension are stacked in the semiconductor material in a "U" shape extending from under the transfer gate.
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申请公布号 |
US8581307(B1) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213543592 |
申请日期 |
2012.07.06 |
申请人 |
CHEN GANG;MAO DULI;TAI HSIN-CHIH;OMNIVISION TECHNOLOGIES, INC. |
发明人 |
CHEN GANG;MAO DULI;TAI HSIN-CHIH |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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