发明名称 |
THYRISTOR RANDOM ACCESS MEMORY DEVICE AND METHOD |
摘要 |
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants. |
申请公布号 |
KR20130123363(A) |
申请公布日期 |
2013.11.12 |
申请号 |
KR20137002248 |
申请日期 |
2011.06.28 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
TANG SANH D.;ZAHURAK JOHN K.;VIOLETTE MICHAEL P. |
分类号 |
H01L21/8239;H01L27/105 |
主分类号 |
H01L21/8239 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|