Semiconductor device having electrode film in which film thickness of periphery is thinner than film thickness of center

摘要

A semiconductor device includes a substrate having first main face having rectangular shape, a first electrode provided at the center on first main face of substrate, first electrode is made of conducting material harder than substrate, and a second electrode provided along at least a part of the periphery on first main face so as to surround first electrode, second electrode is integrated with first electrode by the same conducting material as that of the first electrode, and second electrode has a thinner film thickness than that of the first electrode.