| 发明名称 |
Methods of forming conductive contacts |
| 摘要 |
Methods for forming memory devices and integrated circuitry, for example, DRAM (dynamic random access memory) circuitry, structures and devices resulting from such methods, and systems that incorporate the devices are provided.
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| 申请公布号 |
US8580666(B2) |
申请公布日期 |
2013.11.12 |
| 申请号 |
US201113246146 |
申请日期 |
2011.09.27 |
| 申请人 |
MCDANIEL TERRENCE;TAGG SANDRA;FISHBURN FRED;MICRON TECHNOLOGY, INC. |
发明人 |
MCDANIEL TERRENCE;TAGG SANDRA;FISHBURN FRED |
| 分类号 |
H01L21/3205;H01L21/28;H01L21/285;H01L21/768;H01L21/8242;H01L27/108 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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