发明名称 Method of making integrated circuit embedded with non-volatile programmable memory having variable coupling
摘要 A programmable non-volatile device is made with a floating gate that functions as a FET gate that overlaps a portion of a source/drain region and allows for variable coupling through geometry and/or biasing conditions. This allows a programming voltage for the device to be imparted to the floating gate through variable capacitive coupling, thus changing the state of the device. Multi-state embodiments are also possible. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.
申请公布号 US8580622(B2) 申请公布日期 2013.11.12
申请号 US20080271666 申请日期 2008.11.14
申请人 LIU DAVID;GROSS JOHN NICHOLAS;INVENSAS CORPORATION 发明人 LIU DAVID;GROSS JOHN NICHOLAS
分类号 H01L21/335 主分类号 H01L21/335
代理机构 代理人
主权项
地址