发明名称 Multilayer mirror for EUV lithography and process for its production
摘要 Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
申请公布号 US8580465(B2) 申请公布日期 2013.11.12
申请号 US201213443108 申请日期 2012.04.10
申请人 MIKAMI MASAKI;KOMAKINE MITSUHIKO;IKUTA YOSHIAKI;ASAHI GLASS COMPANY, LIMITED 发明人 MIKAMI MASAKI;KOMAKINE MITSUHIKO;IKUTA YOSHIAKI
分类号 G03F1/24 主分类号 G03F1/24
代理机构 代理人
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