发明名称 |
Methods of forming FinFET devices with alternative channel materials |
摘要 |
One illustrative method disclosed herein involves performing a first etching process through a patterned hard mask layer to define a plurality of spaced-apart trenches in a substrate that defines a first portion of a fin for the device, forming a layer of insulating material in the trenches and performing a planarization process on the layer of insulating material to expose the patterned hard, performing a second etching process to remove the hard mask layer and to define a cavity within the layer of insulating material, forming a second portion of the fin within the cavity, wherein the second portion of the fin is comprised of a semiconducting material that is different than the substrate, and performing a third etching process on the layer of insulating material such that an upper surface of the insulating material is below an upper surface of the second portion of the fin. |
申请公布号 |
US8580642(B1) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213476645 |
申请日期 |
2012.05.21 |
申请人 |
MASZARA WITOLD P.;JACOB AJEY P.;LICAUSI NICHOLAS V.;FRONHEISER JODY A.;AKARVARDAR KEREM;GLOBALFOUNDRIES INC. |
发明人 |
MASZARA WITOLD P.;JACOB AJEY P.;LICAUSI NICHOLAS V.;FRONHEISER JODY A.;AKARVARDAR KEREM |
分类号 |
H01L21/336;H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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