| 发明名称 |
Under-bump metallization (UBM) structure and method of forming the same |
| 摘要 |
An under-bump metallization (UBM) structure in a semiconductor device includes a copper layer, a nickel layer, and a Cu-Ni-Sn intermetallic compound (IMC) layer between the copper layer and the nickel layer.
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| 申请公布号 |
US8581420(B2) |
申请公布日期 |
2013.11.12 |
| 申请号 |
US201113009377 |
申请日期 |
2011.01.19 |
| 申请人 |
TSAI TSUNG-FU;KUO YIAN-LIANG;CHANG CHIH-HORNG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI TSUNG-FU;KUO YIAN-LIANG;CHANG CHIH-HORNG |
| 分类号 |
H01L23/02 |
主分类号 |
H01L23/02 |
| 代理机构 |
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