发明名称 |
Phase-change memory device including a vertically-stacked capacitor and a method of the same |
摘要 |
A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes a phase change memory structure, and the vertically-stacked capacitor structure electrically connected to the phase change memory structure and comprising a first capacitor and a second capacitor that are stacked and electrically connected in parallel to each other.
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申请公布号 |
US8581363(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213433448 |
申请日期 |
2012.03.29 |
申请人 |
YOON TAE-EUNG;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
YOON TAE-EUNG |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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