| 发明名称 |
Power MOSFET with embedded recessed field plate and methods of fabrication |
| 摘要 |
Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
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| 申请公布号 |
US8581341(B2) |
申请公布日期 |
2013.11.12 |
| 申请号 |
US201113089326 |
申请日期 |
2011.04.19 |
| 申请人 |
DARWISH MOHAMED N.;ZENG JUN;SU SHIH-TZUNG;BLANCHARD RICHARD A.;MAXPOWER SEMICONDUCTOR, INC. |
发明人 |
DARWISH MOHAMED N.;ZENG JUN;SU SHIH-TZUNG;BLANCHARD RICHARD A. |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
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