发明名称 |
Method for determining leak rate through a bond line of a MEMS device |
摘要 |
A method for optimizing direct wafer bond line width for reduction of parasitic capacitance in a MEMS device by reducing the width of a bond line between a first and a second wafer, exposing the MEMS device to a water vapor for a predetermined time period and at a first temperature capable of evaporating water, cooling the MEMS device at a second temperature capable of freezing the water, and operating the MEMS device at a third temperature capable of freezing the water to determine if there is discontinuity during operation.
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申请公布号 |
US8579502(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201113185723 |
申请日期 |
2011.07.19 |
申请人 |
ABBINK HENRY C.;KUHN GABRIEL M.;GE HOWARD;SAKAIDA DARYL;NORTHROP GRUMMAN CORPORATION |
发明人 |
ABBINK HENRY C.;KUHN GABRIEL M.;GE HOWARD;SAKAIDA DARYL |
分类号 |
G01N25/06;G01N25/14 |
主分类号 |
G01N25/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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