发明名称 |
Forming bipolar transistor through fast EPI-growth on polysilicon |
摘要 |
Provided is a semiconductor device that includes a first transistor and a second transistor that are formed on the same substrate. The first transistor includes a first collector, a first base, and a first emitter. The first collector includes a first doped well disposed in the substrate. The first base includes a first doped layer disposed above the substrate and over the first doped well. The first emitter includes a doped element disposed over a portion of the first doped layer. The second transistor includes a second collector, a second base, and a second emitter. The second collector includes a doped portion of the substrate. The second base includes a second doped well disposed in the substrate and over the doped portion of the substrate. The second emitter includes a second doped layer disposed above the substrate and over the second doped well.
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申请公布号 |
US8581347(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US20100841275 |
申请日期 |
2010.07.22 |
申请人 |
YEH DER-CHYANG;CHANG LI-WENG;TSENG HUA-CHOU;CHAO CHIH-PING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEH DER-CHYANG;CHANG LI-WENG;TSENG HUA-CHOU;CHAO CHIH-PING |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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