发明名称 Semiconductor device and method for manufacturing the same
摘要 A first local wiring includes a convex portion protruding from a base and a protrusion protruding from a side surface of the convex portion. The convex portion of the first local wiring is connected to a lower conductive region of a first transistor while the protrusion is connected to a gate electrode of a second transistor. Moreover, the lower surface of the protrusion of the first local wiring is arranged at a height equal to or lower than the upper surface of the gate electrode of the second transistor.
申请公布号 US8581333(B2) 申请公布日期 2013.11.12
申请号 US20090922316 申请日期 2009.03.27
申请人 TAKEUCHI KIYOSHI;RENESAS ELECTRONICS CORPORATION 发明人 TAKEUCHI KIYOSHI
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
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