发明名称 |
Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof |
摘要 |
To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in an internal region surrounded by the internal wall of the lower electrode, and a supporting portion a part of which is positioned within the internal region and remaining parts of which are positioned at outside of the internal region. The supporting portion sandwiches an upper end of the lower electrode at both ends of the upper end by covering the internal wall and the external wall of the upper end of the lower electrode.
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申请公布号 |
US8581315(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213366391 |
申请日期 |
2012.02.06 |
申请人 |
ISOGAI SATORU;KUMAUCHI TAKAHIRO;ELPIDA MEMORY, INC. |
发明人 |
ISOGAI SATORU;KUMAUCHI TAKAHIRO |
分类号 |
H01L21/108 |
主分类号 |
H01L21/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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