发明名称 |
Method for manufacturing semiconductor device |
摘要 |
To provide a method for manufacturing a semiconductor device using a method in which a desired position is rapidly subjected to laser irradiation while switching laser irradiation patterns. With respect to an organic memory element having a structure in which an organic compound layer is interposed between a pair of conductive layers, data is written to the organic memory element by laser irradiation using a laser irradiation apparatus. Further, a laser beam emitted from a laser oscillator is split by a diffractive optical element into a plurality of laser beams, thereby irradiating a plurality of portions on the organic compound layer with laser beams by single irradiation.
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申请公布号 |
US8580700(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US20070702082 |
申请日期 |
2007.02.05 |
申请人 |
TANAKA KOICHIRO;OISHI HIROTADA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO;OISHI HIROTADA |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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