发明名称 Method for manufacturing semiconductor device
摘要 To provide a method for manufacturing a semiconductor device using a method in which a desired position is rapidly subjected to laser irradiation while switching laser irradiation patterns. With respect to an organic memory element having a structure in which an organic compound layer is interposed between a pair of conductive layers, data is written to the organic memory element by laser irradiation using a laser irradiation apparatus. Further, a laser beam emitted from a laser oscillator is split by a diffractive optical element into a plurality of laser beams, thereby irradiating a plurality of portions on the organic compound layer with laser beams by single irradiation.
申请公布号 US8580700(B2) 申请公布日期 2013.11.12
申请号 US20070702082 申请日期 2007.02.05
申请人 TANAKA KOICHIRO;OISHI HIROTADA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;OISHI HIROTADA
分类号 H01L21/00 主分类号 H01L21/00
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