| 摘要 |
Systems and methods for detecting watermark formations on semiconductor wafers are described. In one embodiment, a method comprises providing a semiconductor wafer having at least one watermark sensitive region fabricated thereon, subjecting the wafer to a wet processing step, enhancing a susceptibility to detection of at least one watermark formation created on the at least one watermark sensitive region, and detecting the at least one watermark formation. In another embodiment, a method comprises growing a first oxide layer on a surface of a semiconductor wafer, patterning a watermark sensitive structure on the first oxide layer, depositing a silicon layer over the first oxide layer, doping a region of the silicon layer over the watermark sensitive structure with an impurity to create a watermark sensitive region that is prone to retaining watermark formations as result of a wet processing step, and growing a second oxide layer over the silicon layer.
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