发明名称 |
III-V light emitting device with thin n-type region |
摘要 |
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A transparent, conductive non-III-nitride material is disposed in direct contact with the n-type region. A total thickness of semiconductor material between the light emitting layer and the transparent, conductive non-III-nitride material is less than one micron. |
申请公布号 |
US8581229(B2) |
申请公布日期 |
2013.11.12 |
申请号 |
US20090624268 |
申请日期 |
2009.11.23 |
申请人 |
DUPONT FREDERIC;EPLER JOHN E.;KONINKLIJKE PHILIPS N.V.;PHILIPS LUMILEDS LIGHTING COMPANY, LLC |
发明人 |
DUPONT FREDERIC;EPLER JOHN E. |
分类号 |
H01L29/06;H01L31/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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