发明名称 DOUBLE PATTERNING WITH INLINE CHEMICAL CRITICAL DIMENSION SLIMMING
摘要 <p>A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.</p>
申请公布号 KR20130123409(A) 申请公布日期 2013.11.12
申请号 KR20137016304 申请日期 2011.11.11
申请人 TOKYO ELECTRON LIMITED 发明人 DUNN SHANNON W.;HETZER DAVID
分类号 H01L21/027 主分类号 H01L21/027
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