BLACK SILICON SOLAR CELL WITH ULTRA-SHALLOW EMITTER, AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a black silicon solar cell having an ultra-shallow emitter junction layer (USE)(300) and a method for manufacturing the same. The black silicon solar cell comprises a silicon substrate (100) for solar cell; a texturing structural layer (200) of pyramid shape formed on the substrate; an ultra-shallow emitter junction layer (USE)(300) formed on the texturing structural layer (200) by plasma doping; a transparent electrode film (400) formed on the ultra-shallow emitter (USE)(300); a rear electrode (600) formed on the rear surface of the substrate (100); and a front electrode (500) formed a portion of the transparent electrode film (400). The black silicon solar cell with the ultra-shallow emitter junction layer (USE)(300) according to the present invention forms the ultra-shallow emitter junction layer (USE)(300) in the texturing structure having a pyramid structure, thereby advantageously providing a high efficiency solar cell by large incident light quantity and quantum efficiency improvement.