发明名称 PHASE-STABILIZED THIN FILMS, STRUCTURES AND DEVICES INCLUDING THE THIN FILMS, AND METHODS OF FORMING SAME
摘要 <p>Nitrogen containing phase stabilized thin films, methods for forming phase stabilized thin films, and structures and devices including the phase stabilized thin films are disclosed. The phase stabilized thin films comprise a matrix material and a phase stabilizer which provides a morphologic stabilizing effect to the matrix material. The phase stabilized thin films are able to be used as similarity films in gate electrodes and microelectronic devices for example. [Reference numerals] (AA) N_2 and solid mixture;(BB,CC) Mixed phases;(DD) Phase;(EE) Group;(FF) Lattice parameter;(GG,HH) Cube F3m3;(II) Hexagon P63/mmc;(JJ) Square P42/mmm;(KK) Every side Cmcm;(LL) 3.893 �, 10.264 � (usually amorphous)</p>
申请公布号 KR20130123335(A) 申请公布日期 2013.11.12
申请号 KR20130049598 申请日期 2013.05.02
申请人 ASM IP HOLDING B.V. 发明人 MILLIGAN ROBERT BRENNAN;ALOKOZAI FRED
分类号 H01L21/318;H01L21/336;H01L29/78 主分类号 H01L21/318
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