摘要 |
<p>Nitrogen containing phase stabilized thin films, methods for forming phase stabilized thin films, and structures and devices including the phase stabilized thin films are disclosed. The phase stabilized thin films comprise a matrix material and a phase stabilizer which provides a morphologic stabilizing effect to the matrix material. The phase stabilized thin films are able to be used as similarity films in gate electrodes and microelectronic devices for example. [Reference numerals] (AA) N_2 and solid mixture;(BB,CC) Mixed phases;(DD) Phase;(EE) Group;(FF) Lattice parameter;(GG,HH) Cube F3m3;(II) Hexagon P63/mmc;(JJ) Square P42/mmm;(KK) Every side Cmcm;(LL) 3.893 �, 10.264 � (usually amorphous)</p> |