| 摘要 |
The present invention relates to a semiconductor device where a part, where a cavity region (4) is positioned, and a part, where the cavity region is not positioned, exist between a collector electrode (18) and a semiconductor substrate (1). A floating silicon layer (21), which is electrically separated by an insulating film (2), an insulating film (20), and an insulating film (17), is formed between the collector electrode and the substrate where the cavity region is not positioned. |
