发明名称 MANUFACTURING METHOD OF RESISTIVE STRAIN-GAUGE PRESSURE SENSOR BASED ON THIN-FILM NANO- AND MICROELECTROMECHANICAL SYSTEM
摘要 FIELD: measurement equipment.SUBSTANCE: after lead-out wires are connected to contact platforms of strain-gauge elements, they are subject to action of test reduced and increased temperatures; resistances of resistive strain gauges are measuredat influencing temperatures; temperature coefficients of resistances of resistive strain gauges are determined in the range of influencing temperatures; using them, a criterion of timing stability is calculated as per the ratio of ?=|(?+?)-(?+?)|, where ?, ?, ?, ?- temperature coefficient of resistance of the first, the second, the third, the fourth resistive strain gauge of NiMEMS respectively, and if /?/</?/, this assembly is transferred for further operations. Besides, strain-gauge elements, jumpers, contact platforms and lead-out wires are connected to the bridge measuring chain and subject to action of test, reduced and increased temperatures; values of initial output signals of the bridge measuring chain are measured at influencing temperatures; considering them, criterion of timing stability is calculated as per the ratio of ?=|(U-U)(T-T)U?|, and if /?/</?/, assembly is transferred for further operations.EFFECT: improving timing stability, overhaul period and service life.2 cl, 2 dwg
申请公布号 RU2498249(C1) 申请公布日期 2013.11.10
申请号 RU20120121229 申请日期 2012.05.23
申请人 OTKRYTOE AKTSIONERNOE OBSHCHESTVO "NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT FIZICHESKIKH IZMERENIJ" 发明人 BELOZUBOV EVGENIJ MIKHAJLOVICH;BELOZUBOVA NINA EVGEN'EVNA;KOZLOVA NATAL'JA ANATOL'EVNA
分类号 G01L9/04;B82B3/00 主分类号 G01L9/04
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