| 摘要 |
PURPOSE: A thin film type solar cell including a WO3 buffer layer is provided to improve the efficiency of the thin film type solar cell by forming a buffer layer including WO3 between a p-type semiconductor layer and a first electrode. CONSTITUTION: A first electrode (120) is formed on the upper side of a substrate (110). A photoelectric conversion layer (140) is formed on the upper side of the first electrode. The photoelectric conversion layer includes a p-type semiconductor layer (141), an n-type semiconductor layer (143), and an i-type semiconductor layer (142). A second electrode (150) is formed on the upper side of the photoelectric conversion layer. A buffer layer (130) including WO3 is formed between the p-type semiconductor layer and the first electrode. |
