发明名称 METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENTS
摘要 "The invention provides a photoelectric conversion element manufacturing apparatus that forms a semiconductor stack film on a substrate by using microwave plasma CVD. The apparatus includes a chamber which is a enclosed space containing a base, on which the a subject substrate for thin-film formation is mounted, a first gas supply unit which supplies plasma excitation gas to a plasma excitation region in the chamber, a pressure regulation unit which regulates pressure in the chamber, a second gas supply unit which supplies raw gas to a plasma diffusion region in the chamber, a microwave application unit which applies microwaves into the chamber, and a bias voltage application unit which selects and applies a substrate bias voltage to the substrate according to the type of gas."
申请公布号 US2013295709(A1) 申请公布日期 2013.11.07
申请号 US201313900945 申请日期 2013.05.23
申请人 TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED 发明人 OHMI TADAHIRO;TERAMOTO AKINOBU;GOTO TETSUYA;TANAKA KOUJI
分类号 H01L31/18 主分类号 H01L31/18
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