| 摘要 |
The present invention relates to a semiconductor light-emitting diode comprising: a metal electrode; a column support unit formed of n-type semiconductor material on the metal electrode; an n-type cladding comprising a column unit having a plurality of triangular columns, of triangular cross-sections, made of the n-type semiconductor material on the column support unit; an active unit surrounding the column unit so as to be conformal thereto, and formed on the column support unit, between the column units, so as to be conformal thereto, and having quantum well layers and barrier layers alternately stacked therein; a p-type cladding formed of p-type semiconductor material so as to be conformal on the active layer; and a transparent electrode formed on the p-type cladding. |
