发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
摘要 |
In order to prevent formation of voids in STI film, after a second buried insulating layer is filled and planarized, a high density cap is formed embedded in the center region of the second buried insulating layer of the STI trench. The high density cap shields and protects the weaker center region of the second buried insulating layer of the STI trench from the subsequent processing steps and prevents formation of voids in the second buried insulating layer. |
申请公布号 |
US2013292791(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201213460868 |
申请日期 |
2012.05.01 |
申请人 |
LIN CHUN-LI;LI YI-FANG;WU CHUN-SHENG;LEU PO-HSIUNG;LIU DING-I;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN CHUN-LI;LI YI-FANG;WU CHUN-SHENG;LEU PO-HSIUNG;LIU DING-I |
分类号 |
H01L21/302;H01L29/06 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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