| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce the distance between a micro lens and a photo diode by burying a color filter in a trench after the trench is formed in an interlayer insulating layer. CONSTITUTION: Insulating layers(441,442,443) are laminated on a semiconductor substrate(100). A second trench(C2) is formed in the insulating layers. A reflecting layer(445) is formed in the side of a trench. A color filter(500) buries the trench. A planarization layer(600) is formed on the color filter. A micro lens(700) is formed on the planarization layer. |
