| 摘要 |
PURPOSE: A method for manufacturing a nano imprint mold without using a separate wet and dry etching, a method for manufacturing a light emitting diode using the same, and the light emitting diode manufactured thereby are provided to obtain high light extracting efficiency by forming a nano pattern in a large scaled area with a low cost by a simplified process. CONSTITUTION: A method for manufacturing a nano imprint mold comprises: a step of forming a nano pattern in a dimple shape through an anodizing method on a substrate; a step of forming a nano pattern in a hemisphere shape corresponding to the nano pattern of the dimple shape in a first nano imprint mold; a step of separating the first nano imprint mold in which the nano pattern of the hemisphere shape is formed from the substrate; a step of forming the nano pattern of the dimple shape corresponding to the nano pattern of the hemisphere shape in a second nano imprint mold; and a step of separating the second nano imprint mold in which the nano pattern of the dimple shape is formed from the first nano imprint mold. [Reference numerals] (110) n-type nitride semiconductor layer; (120) Light emitting layer; (130) p-type nitride semiconductor layer; (140) p-type electrode; (150) Conductive substrate; (170) n-type electrode |
