SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having a structure capable of suppressing the occurrence of the oxygen deficiency of an oxide semiconductor thin film.SOLUTION: A semiconductor element has such a structure that the nitrogen content of a gate insulating film in a region that is not overlapped with a gate electrode is larger than the nitrogen content of the gate insulating film in a region that is overlapped with the gate electrode. Since a nitride film is excellent in diffusion resistance of an impurity, the use of the structure can prevent oxygen detached from an oxide semiconductor film, especially, a channel formation region from being emitted to the outside.