| 摘要 |
PROBLEM TO BE SOLVED: To suppress increase in leakage current.SOLUTION: In a TFT, a convex part is formed at an upper part of a gate insulating film on a gate electrode layer, and a semiconductor layer and a source drain semiconductor layer are sequentially formed on the convex part. Thus, the gate insulating film side surface of the semiconductor layer becomes higher compared with a surface corresponding to a part on the gate insulating film, of a source drain electrode layer formed on the gate insulating film so as to cover the semiconductor layer and the source drain semiconductor layer. That is, because the semiconductor layer becomes more distant upward from the vicinity of a P-region of the gate insulating film, the semiconductor layer is not affected by electric field concentration generated in the vicinity of the P-region, and thereby, generation of carriers in the semiconductor layer is suppressed. |
