发明名称 REACTOR FOR ATOMIC LAYER DEPOSITION (ALD), AND APPLICATION TO ENCAPSULATION OF OLED DEVICE BY DEPOSITION OF TRANSPARENT Al2O3 FILM
摘要 PROBLEM TO BE SOLVED: To reduce the density of fine particles present in a reaction chamber for atomic layer deposition.SOLUTION: A reactor (1) for atomic layer deposition (ALD) includes: a reaction chamber (100) including a platen (100) and bounded internally by surfaces; and an inlet orifice (11) and an outlet orifice (12); wherein each orifice emerges from one of the upper surface, the lower surface and the side surfaces bounding the chamber (100). The reactor furthermore includes, within it, at least one wall (104) apertured with at least one orifice, the apertured wall extends around the platen and over at least greater part of the height between the lower surface (102) and the upper surface (101), at least one orifice of the apertured walls does not face the inlet orifice so as to form chicanes in the flow of gaseous precursor from each inlet orifice to the platen.
申请公布号 JP2013227677(A) 申请公布日期 2013.11.07
申请号 JP20130101660 申请日期 2013.04.22
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 MAINDRON TONY
分类号 C23C16/455;C23C16/40;H01L21/31;H01L21/316 主分类号 C23C16/455
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