METHOD OF MANUFACTURING GROUP XIII METAL NITRIDE SEMICONDUCTOR CRYSTAL IN PERIODIC TABLE, NOZZLE FOR USE IN THE SAME, AND MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a group XIII metal nitride semiconductor crystal in the periodic table with a small film thickness distribution and a good quality, by a vapor growth method.SOLUTION: When a group XIII metal nitride semiconductor crystal in the periodic table is grown by using a principal surface of a base substrate as a growth surface in a reaction container, a ratio of an area included in a center part of the growth surface of the base substrate of an area of a nozzle projection surface obtained by projecting a supply port of a nozzle for supplying a gas containing the group XIII metal material in the periodic table onto a surface including the growth surface of the base substrate toward its supply direction, is 95% or less, and a ratio of an area included in an outer peripheral part of the growth surface of the base substrate is 5% or more. (The center part means a region from the center of the growth surface of the base substrate to 33% of the maximum diameter of the growth surface of the base substrate, and the outer peripheral part means a region outside the center part of the growth surface of the base substrate.)