发明名称 |
PHOTOVOLTAIC DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC MODULE |
摘要 |
A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.
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申请公布号 |
US2013291924(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201213979272 |
申请日期 |
2012.03.02 |
申请人 |
HAMAMOTO SATOSHI;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
HAMAMOTO SATOSHI |
分类号 |
H01L31/0352 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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