发明名称 PHOTOVOLTAIC DEVICE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC MODULE
摘要 A photovoltaic device includes a silicon substrate of a first conduction type that includes an impurity diffusion layer on one surface side; a light-receiving-surface side electrode that includes a plurality of grid electrodes electrically connected to the impurity diffusion layer; and a back-surface side electrode formed on the other surface side of the silicon substrate wherein the impurity diffusion layer includes a first impurity diffusion layer and a second impurity diffusion layer, and wherein the first impurity diffusion layer is formed so that a direction perpendicular to a longitudinal direction of the grid electrodes is a longitudinal direction thereof, and so that an area ratio of the first impurity diffusion layer to a band region is equal to or lower than 50%.
申请公布号 US2013291924(A1) 申请公布日期 2013.11.07
申请号 US201213979272 申请日期 2012.03.02
申请人 HAMAMOTO SATOSHI;MITSUBISHI ELECTRIC CORPORATION 发明人 HAMAMOTO SATOSHI
分类号 H01L31/0352 主分类号 H01L31/0352
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