GROUP-III NITRIDE SEMICONDUCTOR STACKED SUBSTRATE AND GROUP-III NITRIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor stacked substrate capable of further suppressing current collapse.SOLUTION: In a group-III nitride semiconductor stacked substrate 100, an AlGaN barrier layer 6 has a Cu concentration of lower than or equal to 1.0×10(the number of atoms/cm) at a surface layer region with a depth of lower than or equal to 10 nm from a surface. According to a nitride semiconductor device (GaN-based HFET) having the group-III nitride semiconductor stacked substrate 100, a collapse value of 1.18 is achieved.