| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for forming a gallium nitride film capable of heightening crystallinity of the gallium nitride film, when forming a gallium nitride film on a silicon substrate.SOLUTION: A sputtering device 10 includes a vacuum tank 11 for storing a substrate S, an aluminum target TA and a gallium target TG, and supplies plasma generated from at least one of Ngas and Ar gas to the aluminum target TA and the gallium target TG. Plasma generated from Ar gas is supplied to the aluminum target TA to form an Al film on the substrate S, and plasma generated from mixed gas of Ngas and Ar gas is supplied to the aluminum target TA to form an AlN film on the Al film, and plasma generated from the mixed gas is supplied to the gallium target TG to form a GaN film on the AlN film. |
