| 摘要 |
A fabrication method of a trench power semiconductor structure is provided. First, a substrate with a first epitaxial layer is provided. Then, a dielectric layer is formed on the first epitaxial layer. A shielding layer is formed on the dielectric layer. Next, a portion of the shielding and the dielectric layers are removed to form a shielding structure and a dielectric structure on the first epitaxial layer, wherein the shielding structure is stacked on the dielectric structure. A selective epitaxial growth technique is utilized to form a second epitaxial layer surrounding the dielectric and the shielding structures on the exposed surface of the first epitaxial layer and the second epitaxial layer. Afterward, the shielding structure is removed to form a trench on the dielectric structure. A gate oxide layer is further formed on the inner surface of the trench. Lastly, a conducting structure is formed in the trench.
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