发明名称 |
Semiconductor Structure and Manufacturing Method for the Same |
摘要 |
A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a first doped well, a first doped electrode, a second doped electrode, doped strips and a doped top region. The doped strips are on the first doped well between the first doped electrode and the second doped electrode. The doped strips are separated from each other. The doped top region is on the doped strips and extended on the first doped well between the doped strips. The first doped well and the doped top region have a first conductivity type. The doped strips have a second conductivity type opposite to the first conductivity type.
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申请公布号 |
US2013295728(A1) |
申请公布日期 |
2013.11.07 |
申请号 |
US201313928584 |
申请日期 |
2013.06.27 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIN CHEN-YUAN;LIN CHENG-CHI;LIEN SHIH-CHIN;WU SHYI-YUAN |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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