发明名称 ELECTRICAL FUSE RUPTURE CIRCUIT
摘要 A semiconductor memory device including circuitry for detecting and repairing memory cell failures in a test mode. The memory cell repair process is conducted in a manner that effectively eliminates unnecessary fuse rupture operations and verify operations in a test mode, thus reducing product test time.
申请公布号 US2013294183(A1) 申请公布日期 2013.11.07
申请号 US201213602274 申请日期 2012.09.03
申请人 JANG NAM KYU;SK HYNIX INC. 发明人 JANG NAM KYU
分类号 G11C29/04 主分类号 G11C29/04
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